Device Optimization of N-Channel MOSFETs with Lateral Asymmetric Channel Doping Profiles
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Transactions on Electrical and Electronic Materials
سال: 2010
ISSN: 1229-7607
DOI: 10.4313/teem.2010.11.1.015